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  april 2006 rev 1 1/12 12 STC5DNF30V dual n-channel 30v - 0.032 ? - 4.5a - tssop8 2.7v-driver stripfet? power mosfet general features standard outline for easy automated surface mount assembly ultra low threshold gate drive (2.7v) description this power mosfet is the latest development of stmicroelectronics unique ?single feature size?? strip-based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. no electrical connections are shared between mosfets. applications switching application internal schematic diagram type v dss r ds(on) i d STC5DNF30V 30v < 0.035 ? (@4.5v) < 0.040 ? (@2.7v) 4.5a tssop8 www.st.com order codes part number marking package packaging STC5DNF30V c5dnf30v tssop8 tape & reel
contents STC5DNF30V 2/12 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STC5DNF30V electrical ratings 3/12 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v gs gate- source voltage 8 v i d (1) 1. when mounted on fr-4 board with 1inch2 pad, 2 oz of cu and t<10sec. drain current (continuous) at t c = 25c 4.5 a i d (1) drain current (continuous) at t c = 100c 2.8 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 18 a p tot (1) total dissipation at t c = 25c 1.3 w table 2. thermal data symbol parameter value unit rthj-pcb (1) rthj-pcb (2) 1. when mounted on minimum recommended footprint. 2. when mounted on fr-4 board with 1inch2 pad, 2 oz of cu and t<10sec. thermal resistance junction-pcb max thermal resistance junction-pcb max 120 97.5 c/w c/w t j t stg operating junction temperature storage temperature -55 to 150 -55 to 150 c c
electrical characteristics STC5DNF30V 4/12 2 electrical characteristics (t j =25c unless otherwise specified) table 3. on/off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating,t c =125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 8v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 0.6 v r ds(on) static drain-source on resistance v gs = 4.5v, i d = 2.3a v gs = 2.7v, i d = 2.3a 0.032 0.036 0.035 0.040 ? ? table 4. dynamic symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ds =25v ; i d = 2.3a 9.5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 460 200 50 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 16v, i d = 4.5a, v gs = 4.5v (see figure 14) 8.5 1.8 2.4 11.5 ns ns ns table 5. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t r turn-on delay time rise time turn-off delay time fall time v dd = 10v, i d = 2.3a, r g = 4.7 ? v gs = 4.5v (see figure 13) 7 33 27 10 ns ns ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 16v, i d = 2.3a, r g =4.7 ?, v gs = 4.5v (see figure 17) 26 11 21 ns ns ns
STC5DNF30V electrical characteristics 5/12 table 6. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) 4.5 18 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5 %. forward on voltage i sd = 4.5a, v gs = 0 1.2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 4.5a, di/dt =100a/s, v dd = 10v, t j = 150c (see figure 15) 26 13 1 ns nc a
electrical characteristics STC5DNF30V 6/12 2.1 electrical characteristics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characteristics figure 4. transfer characteristics figure 5. transconductance figure 6. static drain-source on resistance
STC5DNF30V electrical characteristics 7/12 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate thereshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics figure 12. thermal resistance and max power
test circuits STC5DNF30V 8/12 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform
STC5DNF30V package mechanical data 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data STC5DNF30V 10/12 dim. mm. inch min. typ max. min. typ. max. a 1.05 1.20 0.041 0.047 a1 0.05 0.15 0.002 0.006 a2 0.80 1.05 0.032 0.041 b 0.19 0.30 0.008 0.012 c 0.127 0.005 d 2.90 3.10 0.114 0.122 e 4.30 4.50 0.170 0.177 e1 6.20 6.60 0.240 0.260 e2 5.14 5.24 0.202 0.206 e 0.65 0.025 l 0.45 0.75 0.018 0.030 l1 0.90 1.10 0.0355 0.0433 r 0.09 0.004 r1 0.09 0.004 10 8 0 8 2 12 tssop8 mechanical data
STC5DNF30V revision history 11/12 5 revision history table 7. date revision changes 11-apr-2006 1 first release
STC5DNF30V 12/12 please read carefully: i nformation in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st? ) reserve th e r ight to make changes, corrections, modifications or improvements, to this document, and the products and services described her ein at an y t ime, without notice. a ll st products are sold pursuant to st?s terms and conditions of sale. p urchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st ass umes n o l iability whatsoever relating to the choice, selection or use of the st products and services described herein. n o license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. if any part of th is d ocument refers to any third party products or services it shall not be deemed a license grant by st for the use of such third p arty produc ts o r services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoeve r of suc h t hird party products or services or any intellectual property contained therein. u nless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implie d w arranty with respect to the use and/or sale of st products including without limitation implie d w arranties of merchantability, fitness for a particular purpose (and their equivalents under the law s o f any jurisdiction), or infringement of any patent, copyright or other intellectual property right. u nless expressly approved in writing by an authorize representative of st, st products are not designe d, a uthorized or warranted for use in military, air craft, space, life saving, or life sustaining application s, n or in products or systems, where failure or malfunction may result in personal injury, death, o r s evere property or environmental damage. r esale of st products with provisions different from the statements and/or technical features set forth in this document shall i mmediately vo id a ny warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoeve r, an y l iability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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